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FDMS3660AS Технические параметры

ON Semiconductor  FDMS3660AS technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8Pins
Weight 171mg
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 13A 30A
Number of Elements 2 Elements
Turn Off Delay Time 38 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®
Published 2017
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 2.5W
Terminal Form FLAT
JESD-30 Code R-PDSO-F6
Свойство продукта Значение свойства
Configuration SERIES, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN SOURCE
Power - Max 1W
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8m Ω @ 13A, 10V
Vgs(th) (Max) @ Id 2.7V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2230pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Rise Time 5ns
Fall Time (Typ) 5 ns
Continuous Drain Current (ID) 30A
JEDEC-95 Code MO-240AA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 13A
Drain to Source Breakdown Voltage 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Feedback Cap-Max (Crss) 70 pF
Height 1.1mm
Length 5mm
Width 5.9mm
Radiation Hardening No
RoHS Status ROHS3 Compliant

FDMS3660AS Документы

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