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FDN5618P-B8 Технические параметры

ON Semiconductor  FDN5618P-B8 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка ON Semiconductor
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SuperSOT™-3
RoHS Non-Compliant
Package Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25℃ 1.25A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Mfr onsemi
Power Dissipation (Max) 460mW (Ta)
Product Status Obsolete
Свойство продукта Значение свойства
Operating Temperature -55°C ~ 150°C (TJ)
Series PowerTrench®
Technology MOSFET (Metal Oxide)
FET Type P-Channel
Rds On (Max) @ Id, Vgs 170mOhm @ 1.25A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds 430 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs 13.8 nC @ 10 V
Drain to Source Voltage (Vdss) 60 V
Vgs (Max) ±20V
FET Feature -
Просмотр сходства
FDN5618P-B8 brand manufacturers: ON Semiconductor, Anli stock, FDN5618P-B8 reference price.ON Semiconductor. FDN5618P-B8 parameters, FDN5618P-B8 Datasheet PDF and pin diagram description download.You can use the FDN5618P-B8 Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find FDN5618P-B8 pin diagram and circuit diagram and usage method of function,FDN5618P-B8 electronics tutorials.You can download from the Anli.