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ON Semiconductor FDPC8014S technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | ON Semiconductor | |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) | |
| Factory Lead Time | 23 Weeks | |
| Contact Plating | Tin | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-PowerWDFN | |
| Number of Pins | 8Pins | |
| Weight | 207.7333mg | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 20A 41A | |
| Number of Elements | 2 Elements | |
| Turn Off Delay Time | 47 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | PowerTrench® | |
| Published | 2017 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 8Terminations | |
| ECCN Code | EAR99 | |
| Max Power Dissipation | 2.3W | |
| Terminal Form | NO LEAD | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Reach Compliance Code | not_compliant | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Number of Channels | 2Channels | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Turn On Delay Time | 16 ns | |
| Power - Max | 2.1W 2.3W | |
| FET Type | 2 N-Channel (Dual) Asymmetrical | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 3.8m Ω @ 20A, 10V | |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 2375pF @ 13V | |
| Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V | |
| Rise Time | 6ns | |
| Drain to Source Voltage (Vdss) | 25V | |
| Fall Time (Typ) | 4 ns | |
| Continuous Drain Current (ID) | 41A | |
| Gate to Source Voltage (Vgs) | 12V | |
| Drain Current-Max (Abs) (ID) | 110A | |
| Pulsed Drain Current-Max (IDM) | 75A | |
| Avalanche Energy Rating (Eas) | 73 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | Logic Level Gate | |
| Height | 750μm | |
| Length | 5.1mm | |
| Width | 6.1mm | |
| RoHS Status | ROHS3 Compliant |