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FDPF7N60NZ Технические параметры

ON Semiconductor  FDPF7N60NZ technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка ON Semiconductor
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 19 hours ago)
Package / Case TO-220-3 Full Pack
Mounting Type Through Hole
Mount Through Hole
Number of Pins 3Pins
Weight 2.27g
Transistor Element Material SILICON
Turn Off Delay Time 40 ns
Power Dissipation (Max) 33W Tc
Number of Elements 1 Element
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25℃ 6.5A Tc
Published 2013
Series UniFET-II™
Packaging Tube
Operating Temperature -55°C~150°C TJ
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Resistance 1.25Ohm
Terminal Finish Tin (Sn)
Свойство продукта Значение свойства
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 33W
Case Connection ISOLATED
Turn On Delay Time 17.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.25 Ω @ 3.25A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 730pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Rise Time 70ns
Vgs (Max) ±30V
Fall Time (Typ) 60 ns
Continuous Drain Current (ID) 6.5A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 26A
Avalanche Energy Rating (Eas) 275 mJ
Width 4.9mm
Length 10.36mm
Height 16.07mm
RoHS Status ROHS3 Compliant
Radiation Hardening No
Lead Free Lead Free

FDPF7N60NZ Документы

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