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FDS4559 Технические параметры

ON Semiconductor  FDS4559 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Factory Lead Time 8 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8Pins
Weight 187mg
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 4.5A 3.5A
Number of Elements 2 Elements
Turn Off Delay Time 19 ns
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®
Published 2002
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
Termination SMD/SMT
ECCN Code EAR99
Resistance 55MOhm
Max Power Dissipation 2W
Terminal Form GULL WING
Current Rating 4.5A
Number of Channels 2Channels
Свойство продукта Значение свойства
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Power - Max 1W
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 55m Ω @ 4.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 650pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
Rise Time 10ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 12 ns
Continuous Drain Current (ID) 4.5A
Threshold Voltage 2.2V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Dual Supply Voltage 60V
Avalanche Energy Rating (Eas) 90 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 175°C
FET Feature Logic Level Gate
Nominal Vgs 2.2 V
Height 1.75mm
Length 5mm
Width 4mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

FDS4559 Документы

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