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ON Semiconductor FDS4559-F085 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
Свойство продукта | Значение свойства | |
---|---|---|
Классификация | Transistors - FETs, MOSFETs - Arrays | |
Марка | ON Semiconductor | |
Lifecycle Status | ACTIVE (Last Updated: 1 week ago) | |
Mount | Surface Mount | |
Mounting Type | Surface Mount | |
Package / Case | 8-SOIC (0.154, 3.90mm Width) | |
Number of Pins | 8Pins | |
Weight | 230.4mg | |
Transistor Element Material | SILICON | |
Current - Continuous Drain (Id) @ 25℃ | 4.5A 3.5A | |
Number of Elements | 2 Elements | |
Turn Off Delay Time | 19 ns | |
Operating Temperature | -55°C~150°C TJ | |
Packaging | Tape & Reel (TR) | |
Series | Automotive, AEC-Q101, PowerTrench® | |
Published | 2002 | |
Pbfree Code | yes | |
Part Status | Active | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Number of Terminations | 8Terminations | |
Max Power Dissipation | 2W | |
Terminal Position | DUAL |
Свойство продукта | Значение свойства | |
---|---|---|
Terminal Form | GULL WING | |
Operating Mode | ENHANCEMENT MODE | |
Power Dissipation | 2W | |
FET Type | N and P-Channel | |
Transistor Application | SWITCHING | |
Rds On (Max) @ Id, Vgs | 55m Ω @ 4.5A, 10V | |
Vgs(th) (Max) @ Id | 3V @ 250μA | |
Input Capacitance (Ciss) (Max) @ Vds | 650pF @ 25V | |
Gate Charge (Qg) (Max) @ Vgs | 18nC @ 10V | |
Rise Time | 10ns | |
Polarity/Channel Type | N-CHANNEL | |
Fall Time (Typ) | 12 ns | |
Continuous Drain Current (ID) | 3.5A | |
Gate to Source Voltage (Vgs) | 20V | |
Drain Current-Max (Abs) (ID) | 4.5A | |
Drain-source On Resistance-Max | 0.055Ohm | |
Drain to Source Breakdown Voltage | 60V | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
FET Feature | Logic Level Gate | |
Radiation Hardening | No | |
RoHS Status | ROHS3 Compliant | |
Lead Free | Lead Free |