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FDS4935 Технические параметры
ON Semiconductor FDS4935 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | ON Semiconductor | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) | |
| Number of Pins | 8Pins | |
| Transistor Element Material | SILICON | |
| Number of Elements | 2 Elements | |
| Turn Off Delay Time | 48 ns | |
| Operating Temperature | -55°C~175°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | PowerTrench® | |
| Published | 2000 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 8Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin (Sn) | |
| Additional Feature | ESD PROTECTION | |
| Voltage - Rated DC | -30V | |
| Max Power Dissipation | 900mW | |
| Terminal Form | GULL WING |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Current Rating | -7A | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Qualification Status | Not Qualified | |
| Voltage | 30V | |
| Current | 7A | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 2W | |
| FET Type | 2 P-Channel (Dual) | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 23m Ω @ 7A, 10V | |
| Vgs(th) (Max) @ Id | 3V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 1233pF @ 15V | |
| Gate Charge (Qg) (Max) @ Vgs | 21nC @ 5V | |
| Rise Time | 10ns | |
| Fall Time (Typ) | 25 ns | |
| Continuous Drain Current (ID) | 7A | |
| Gate to Source Voltage (Vgs) | 25V | |
| Drain to Source Breakdown Voltage | -30V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | Logic Level Gate | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |
Индекс :
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