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FDS6875 Технические параметры

ON Semiconductor  FDS6875 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Factory Lead Time 10 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8Pins
Weight 187mg
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 6A
Number of Elements 2 Elements
Turn Off Delay Time 98 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Resistance 30mOhm
Voltage - Rated DC -20V
Max Power Dissipation 2W
Terminal Form GULL WING
Current Rating -6A
Свойство продукта Значение свойства
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 8 ns
Power - Max 900mW
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 30m Ω @ 6A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2250pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 31nC @ 5V
Rise Time 15ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 35 ns
Continuous Drain Current (ID) -6A
Threshold Voltage -800mV
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 6A
Drain to Source Breakdown Voltage -20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 1.5mm
Length 5mm
Width 4mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

FDS6875 Документы

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