[email protected]

Локаль

Язык

  • English
  • русский

Валюта

  • CNY-¥
  • RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
Классификация Марка Марка О Anli Запрос цены
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
[email protected]

FDS6900AS Технические параметры

ON Semiconductor  FDS6900AS technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Factory Lead Time 18 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8Pins
Weight 187mg
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 6.9A 8.2A
Number of Elements 2 Elements
Turn Off Delay Time 23 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®, SyncFET™
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
Termination SMD/SMT
ECCN Code EAR99
Resistance 27MOhm
Voltage - Rated DC 30V
Max Power Dissipation 2W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Current Rating 8.2A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Power - Max 900mW
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 27m Ω @ 6.9A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 600pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Rise Time 4ns
Fall Time (Typ) 3 ns
Continuous Drain Current (ID) 8.2A
Threshold Voltage 1.9V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 6.9A
Drain to Source Breakdown Voltage 30V
Dual Supply Voltage 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 1.9 V
Height 1.5mm
Length 5mm
Width 3.99mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Просмотр сходства

FDS6900AS Документы

FDS6900AS brand manufacturers: ON Semiconductor, Anli stock, FDS6900AS reference price.ON Semiconductor. FDS6900AS parameters, FDS6900AS Datasheet PDF and pin diagram description download.You can use the FDS6900AS Transistors - FETs, MOSFETs - Arrays, DSP Datesheet PDF, find FDS6900AS pin diagram and circuit diagram and usage method of function,FDS6900AS electronics tutorials.You can download from the Anli.