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FDS6982AS Технические параметры

ON Semiconductor  FDS6982AS technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Factory Lead Time 18 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8Pins
Weight 187mg
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 6.3A 8.6A
Number of Elements 2 Elements
Turn Off Delay Time 24 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®, SyncFET™
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Resistance 28MOhm
Voltage - Rated DC 30V
Max Power Dissipation 2W
Terminal Form GULL WING
Current Rating 8.6A
Number of Channels 2Channels
Operating Mode ENHANCEMENT MODE
Свойство продукта Значение свойства
Power Dissipation 2W
Turn On Delay Time 12 ns
Power - Max 900mW
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 28m Ω @ 6.3A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 610pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Rise Time 7ns
Fall Time (Typ) 3 ns
Continuous Drain Current (ID) 8.6A
Threshold Voltage 1.9V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 30A
FET Technology METAL-OXIDE SEMICONDUCTOR
Recovery Time 19 ns
Max Junction Temperature (Tj) 150°C
FET Feature Logic Level Gate
Nominal Vgs 1.4 V
Turn Off Time-Max (toff) 64ns
Turn On Time-Max (ton) 34ns
Height 1.75mm
Length 5mm
Width 3.99mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

FDS6982AS Документы

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