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FDS8935 Технические параметры

ON Semiconductor  FDS8935 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Factory Lead Time 11 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8Pins
Weight 187mg
Transistor Element Material SILICON
Number of Elements 2 Elements
Turn Off Delay Time 22 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Max Power Dissipation 3.1W
Terminal Form GULL WING
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.1W
Свойство продукта Значение свойства
Turn On Delay Time 5 ns
Power - Max 1.6W
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 183m Ω @ 2.1A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 879pF @ 40V
Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V
Rise Time 3ns
Drain to Source Voltage (Vdss) 80V
Fall Time (Typ) 3 ns
Continuous Drain Current (ID) 2.1A
Threshold Voltage -1.8V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -80V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs -1.8 V
Feedback Cap-Max (Crss) 36 pF
Height 1.5mm
Length 4mm
Width 5mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant

FDS8935 Документы

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