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FDS8958A Технические параметры

ON Semiconductor  FDS8958A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 15 hours ago)
Factory Lead Time 18 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8Pins
Current - Continuous Drain (Id) @ 25℃ 7A 5A
Number of Elements 2 Elements
Turn Off Delay Time 14 ns
Packaging Tape & Reel (TR)
Series PowerTrench®
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
Termination SMD/SMT
Resistance 28mOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 2W
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 7A
Operating Mode ENHANCEMENT MODE
Свойство продукта Значение свойства
Power Dissipation 2W
Power - Max 900mW
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 28m Ω @ 7A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 575pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
Rise Time 13ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 9 ns
Continuous Drain Current (ID) 7A
Threshold Voltage 1.9V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 7A
Drain to Source Breakdown Voltage 30V
Dual Supply Voltage 30V
Avalanche Energy Rating (Eas) 54 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 1.9 V
Height 1.5mm
Length 5mm
Width 4mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

FDS8958A Документы

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