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ON Semiconductor FDS8960C technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | ON Semiconductor | |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 1 week ago) | |
| Contact Plating | Tin | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) | |
| Number of Pins | 8Pins | |
| Weight | 230.4mg | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 7A 5A | |
| Number of Elements | 2 Elements | |
| Turn Off Delay Time | 20 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | PowerTrench® | |
| Published | 2005 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 8Terminations | |
| Termination | SMD/SMT | |
| ECCN Code | EAR99 | |
| Resistance | 24MOhm | |
| Additional Feature | FAST SWITCHING | |
| Max Power Dissipation | 2W | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Current Rating | 7A |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Number of Channels | 2Channels | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 2W | |
| Power - Max | 900mW | |
| FET Type | N and P-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 24m Ω @ 7A, 10V | |
| Vgs(th) (Max) @ Id | 3V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 570pF @ 15V | |
| Gate Charge (Qg) (Max) @ Vgs | 7.7nC @ 5V | |
| Rise Time | 16ns | |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | |
| Fall Time (Typ) | 5 ns | |
| Continuous Drain Current (ID) | 7A | |
| Threshold Voltage | 1V | |
| Gate to Source Voltage (Vgs) | 25V | |
| Drain Current-Max (Abs) (ID) | 7A | |
| Drain to Source Breakdown Voltage | 35V | |
| Dual Supply Voltage | 35V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Max Junction Temperature (Tj) | 150°C | |
| FET Feature | Logic Level Gate | |
| Nominal Vgs | 2 V | |
| Height | 1.75mm | |
| Length | 4.9mm | |
| Width | 3.9mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |