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FDS8960C Технические параметры

ON Semiconductor  FDS8960C technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка ON Semiconductor
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8Pins
Weight 230.4mg
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 7A 5A
Number of Elements 2 Elements
Turn Off Delay Time 20 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
Termination SMD/SMT
ECCN Code EAR99
Resistance 24MOhm
Additional Feature FAST SWITCHING
Max Power Dissipation 2W
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 7A
Свойство продукта Значение свойства
Number of Channels 2Channels
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Power - Max 900mW
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 24m Ω @ 7A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 570pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 7.7nC @ 5V
Rise Time 16ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 5 ns
Continuous Drain Current (ID) 7A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 25V
Drain Current-Max (Abs) (ID) 7A
Drain to Source Breakdown Voltage 35V
Dual Supply Voltage 35V
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 150°C
FET Feature Logic Level Gate
Nominal Vgs 2 V
Height 1.75mm
Length 4.9mm
Width 3.9mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

FDS8960C Документы

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