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FDS9953A Технические параметры

ON Semiconductor  FDS9953A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8Pins
Weight 230.4mg
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 2.9A
Number of Elements 2 Elements
Turn Off Delay Time 11 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®
Published 2001
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Resistance 130MOhm
Terminal Finish Tin (Sn)
Voltage - Rated DC -30V
Max Power Dissipation 2W
Terminal Form GULL WING
Current Rating -2.9A
Свойство продукта Значение свойства
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 4.5 ns
Power - Max 900mW
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 130m Ω @ 1A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 185pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 3.5nC @ 10V
Rise Time 13ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 2 ns
Continuous Drain Current (ID) 2.9mA
Threshold Voltage -1.8V
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage -30V
Pulsed Drain Current-Max (IDM) 10A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 1.8 V
Height 1.5mm
Length 5mm
Width 4mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

FDS9953A Документы

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