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FDV301N Технические параметры
ON Semiconductor FDV301N technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ON Semiconductor | |
| Lifecycle Status | ACTIVE (Last Updated: 15 hours ago) | |
| Factory Lead Time | 10 Weeks | |
| Contact Plating | Tin | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Manufacturer Package Identifier | SOT−23 (TO−236) CASE 318−08 ISSUE AR | |
| Current - Continuous Drain (Id) @ 25℃ | 220mA Ta | |
| Drive Voltage (Max Rds On, Min Rds On) | 2.7V 4.5V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 350mW Ta | |
| Turn Off Delay Time | 3.5 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 1999 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| Termination | SMD/SMT | |
| ECCN Code | EAR99 | |
| Resistance | 4Ohm | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Voltage - Rated DC | 25V | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Current Rating | 220mA | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Number of Channels | 1Channel | |
| Voltage | 50V | |
| Element Configuration | Single | |
| Current | 2A | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 350mW | |
| Turn On Delay Time | 3.2 ns | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 4 Ω @ 400mA, 4.5V | |
| Vgs(th) (Max) @ Id | 1.06V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 9.5pF @ 10V | |
| Gate Charge (Qg) (Max) @ Vgs | 0.7nC @ 4.5V | |
| Rise Time | 6ns | |
| Vgs (Max) | ±8V | |
| Fall Time (Typ) | 6 ns | |
| Continuous Drain Current (ID) | 220mA | |
| Gate to Source Voltage (Vgs) | 8V | |
| Drain to Source Breakdown Voltage | 25V | |
| Dual Supply Voltage | 25V | |
| Max Junction Temperature (Tj) | 150°C | |
| Nominal Vgs | 850 mV | |
| Height | 1.11mm | |
| Length | 2.92mm | |
| Width | 3.05mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
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