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ON Semiconductor FDZ1905PZ technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
Свойство продукта | Значение свойства | |
---|---|---|
Классификация | Transistors - FETs, MOSFETs - Arrays | |
Марка | ON Semiconductor | |
Lifecycle Status | ACTIVE (Last Updated: 1 week ago) | |
Factory Lead Time | 46 Weeks | |
Mount | Surface Mount | |
Mounting Type | Surface Mount | |
Package / Case | 6-UFBGA, WLCSP | |
Number of Pins | 6Pins | |
Weight | 54mg | |
Transistor Element Material | SILICON | |
Number of Elements | 2 Elements | |
Turn Off Delay Time | 143 ns | |
Operating Temperature | -55°C~150°C TJ | |
Packaging | Tape & Reel (TR) | |
Series | PowerTrench® | |
Published | 2016 | |
JESD-609 Code | e1 | |
Pbfree Code | yes | |
Part Status | Active | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Number of Terminations | 6Terminations | |
ECCN Code | EAR99 | |
Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
Свойство продукта | Значение свойства | |
---|---|---|
Max Power Dissipation | 900mW | |
Terminal Position | BOTTOM | |
Terminal Form | BALL | |
Operating Mode | ENHANCEMENT MODE | |
Power Dissipation | 1.5W | |
Turn On Delay Time | 12 ns | |
FET Type | 2 P-Channel (Dual) | |
Transistor Application | SWITCHING | |
Rds On (Max) @ Id, Vgs | 126m Ω @ 1A, 4.5V | |
Vgs(th) (Max) @ Id | 1V @ 250μA | |
Rise Time | 36ns | |
Drain to Source Voltage (Vdss) | -20V | |
Fall Time (Typ) | 36 ns | |
Continuous Drain Current (ID) | -3A | |
Gate to Source Voltage (Vgs) | 8V | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
FET Feature | Logic Level Gate | |
Height | 650μm | |
Length | 1mm | |
Width | 1.5mm | |
Radiation Hardening | No | |
RoHS Status | ROHS3 Compliant |