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FGA15N120ANTDTU Технические параметры

ON Semiconductor  FGA15N120ANTDTU technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка ON Semiconductor
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3Pins
Collector-Emitter Breakdown Voltage 1.2kV
Collector-Emitter Saturation Voltage 2.4V
Test Conditions 600V, 15A, 10 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2006
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Voltage - Rated DC 1.2kV
Max Power Dissipation 186W
Current Rating 15A
Element Configuration Single
Power Dissipation 186W
Свойство продукта Значение свойства
Input Type Standard
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 30A
Reverse Recovery Time 330ns
Continuous Drain Current (ID) 15A
Voltage - Collector Emitter Breakdown (Max) 1200V
Drain to Source Breakdown Voltage 1.2kV
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 15A
IGBT Type NPT and Trench
Gate Charge 120nC
Current - Collector Pulsed (Icm) 45A
Td (on/off) @ 25°C 15ns/160ns
Switching Energy 3mJ (on), 600μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 8.5V
Fall Time-Max (tf) 180ns
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free

FGA15N120ANTDTU Документы

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