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ON Semiconductor FGA15N120ANTDTU technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | ON Semiconductor | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-3P-3, SC-65-3 | |
| Number of Pins | 3Pins | |
| Collector-Emitter Breakdown Voltage | 1.2kV | |
| Collector-Emitter Saturation Voltage | 2.4V | |
| Test Conditions | 600V, 15A, 10 Ω, 15V | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tube | |
| Published | 2006 | |
| Pbfree Code | yes | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| ECCN Code | EAR99 | |
| Voltage - Rated DC | 1.2kV | |
| Max Power Dissipation | 186W | |
| Current Rating | 15A | |
| Element Configuration | Single | |
| Power Dissipation | 186W |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Input Type | Standard | |
| Polarity/Channel Type | N-CHANNEL | |
| Collector Emitter Voltage (VCEO) | 1.2kV | |
| Max Collector Current | 30A | |
| Reverse Recovery Time | 330ns | |
| Continuous Drain Current (ID) | 15A | |
| Voltage - Collector Emitter Breakdown (Max) | 1200V | |
| Drain to Source Breakdown Voltage | 1.2kV | |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 15A | |
| IGBT Type | NPT and Trench | |
| Gate Charge | 120nC | |
| Current - Collector Pulsed (Icm) | 45A | |
| Td (on/off) @ 25°C | 15ns/160ns | |
| Switching Energy | 3mJ (on), 600μJ (off) | |
| Gate-Emitter Voltage-Max | 20V | |
| Gate-Emitter Thr Voltage-Max | 8.5V | |
| Fall Time-Max (tf) | 180ns | |
| REACH SVHC | No SVHC | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |