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FGA15S125P Технические параметры

ON Semiconductor  FGA15S125P technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Factory Lead Time 4 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3Pins
Weight 6.401g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.25kV
Collector-Emitter Saturation Voltage 2.72V
Number of Elements 1 Element
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Свойство продукта Значение свойства
Max Power Dissipation 136W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Element Configuration Single
Power Dissipation 136W
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.25kV
Max Collector Current 30A
Voltage - Collector Emitter Breakdown (Max) 1250V
Turn On Time 331 ns
Vce(on) (Max) @ Vge, Ic 2.72V @ 15V, 15A
Turn Off Time-Nom (toff) 670 ns
IGBT Type Trench
Gate Charge 129nC
Current - Collector Pulsed (Icm) 45A
Gate-Emitter Voltage-Max 25V
Gate-Emitter Thr Voltage-Max 7.5V
Height 20.1mm
Length 15.8mm
Width 5mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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FGA15S125P Документы

FGA15S125P brand manufacturers: ON Semiconductor, Anli stock, FGA15S125P reference price.ON Semiconductor. FGA15S125P parameters, FGA15S125P Datasheet PDF and pin diagram description download.You can use the FGA15S125P Transistors - IGBTs - Single, DSP Datesheet PDF, find FGA15S125P pin diagram and circuit diagram and usage method of function,FGA15S125P electronics tutorials.You can download from the Anli.