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ON Semiconductor FGA20S120M technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | ON Semiconductor | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-3P-3, SC-65-3 | |
| Number of Pins | 3Pins | |
| Weight | 6.401g | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 1.2kV | |
| Collector-Emitter Saturation Voltage | 1.55V | |
| Number of Elements | 1 Element | |
| Operating Temperature | -55°C~175°C TJ | |
| Packaging | Tube | |
| Published | 2013 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin (Sn) | |
| HTS Code | 8541.29.00.95 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Max Power Dissipation | 348W | |
| Element Configuration | Single | |
| Input Type | Standard | |
| Power - Max | 348W | |
| Transistor Application | POWER CONTROL | |
| Polarity/Channel Type | N-CHANNEL | |
| Collector Emitter Voltage (VCEO) | 1.2kV | |
| Max Collector Current | 40A | |
| Voltage - Collector Emitter Breakdown (Max) | 1200V | |
| Turn On Time | 301 ns | |
| Vce(on) (Max) @ Vge, Ic | 1.85V @ 15V, 20A | |
| Turn Off Time-Nom (toff) | 865 ns | |
| IGBT Type | Trench Field Stop | |
| Gate Charge | 208nC | |
| Current - Collector Pulsed (Icm) | 60A | |
| Height | 20.1mm | |
| Length | 15.8mm | |
| Width | 5mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant |