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ON Semiconductor FGA25N120ANTDTU-F109 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | ON Semiconductor | |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) | |
| Factory Lead Time | 6 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-3P-3, SC-65-3 | |
| Number of Pins | 3Pins | |
| Weight | 6.401g | |
| Collector-Emitter Breakdown Voltage | 1.2kV | |
| Test Conditions | 600V, 25A, 10 Ω, 15V | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tube | |
| Published | 2004 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| ECCN Code | EAR99 | |
| Max Power Dissipation | 312W | |
| Base Part Number | FGA25N120A | |
| Rise Time-Max | 90ns | |
| Element Configuration | Single |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Input Type | Standard | |
| Power - Max | 312W | |
| Polarity/Channel Type | N-CHANNEL | |
| Collector Emitter Voltage (VCEO) | 1.2kV | |
| Max Collector Current | 50A | |
| Reverse Recovery Time | 350 ns | |
| Voltage - Collector Emitter Breakdown (Max) | 1200V | |
| Vce(on) (Max) @ Vge, Ic | 2.65V @ 15V, 50A | |
| IGBT Type | NPT and Trench | |
| Gate Charge | 200nC | |
| Current - Collector Pulsed (Icm) | 90A | |
| Td (on/off) @ 25°C | 50ns/190ns | |
| Switching Energy | 4.1mJ (on), 960μJ (off) | |
| Gate-Emitter Voltage-Max | 20V | |
| Gate-Emitter Thr Voltage-Max | 7.5V | |
| Fall Time-Max (tf) | 180ns | |
| Height | 18.9mm | |
| Length | 15.8mm | |
| Width | 5mm | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant |