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FGA25S125P-SN00337 Технические параметры

ON Semiconductor  FGA25S125P-SN00337 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Factory Lead Time 4 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Weight 6.401g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.25kV
Number of Elements 1 Element
Test Conditions 600V, 25A, 10 Ω, 15V
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2016
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Max Power Dissipation 250W
Свойство продукта Значение свойства
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Configuration SINGLE WITH BUILT-IN DIODE
Input Type Standard
Power - Max 250W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.35V
Max Collector Current 50A
Voltage - Collector Emitter Breakdown (Max) 1250V
Vce(on) (Max) @ Vge, Ic 2.35V @ 15V, 25A
IGBT Type Trench Field Stop
Gate Charge 204nC
Current - Collector Pulsed (Icm) 75A
Td (on/off) @ 25°C 24ns/502ns
Switching Energy 1.09mJ (on), 580μJ (off)
RoHS Status ROHS3 Compliant

FGA25S125P-SN00337 Документы

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