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FGA30N60LSDTU Технические параметры

ON Semiconductor  FGA30N60LSDTU technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка ON Semiconductor
Factory Lead Time 7 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3Pins
Weight 6.401g
Transistor Element Material SILICON
Number of Elements 1 Element
Collector-Emitter Breakdown Voltage 600V
Test Conditions 400V, 30A, 6.8 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Max Power Dissipation 480W
Свойство продукта Значение свойства
Element Configuration Single
Input Type Standard
Power - Max 480W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 60A
Reverse Recovery Time 35 ns
Turn On Time 62 ns
Vce(on) (Max) @ Vge, Ic 1.4V @ 15V, 30A
Turn Off Time-Nom (toff) 2870 ns
IGBT Type Trench Field Stop
Gate Charge 225nC
Current - Collector Pulsed (Icm) 90A
Td (on/off) @ 25°C 18ns/250ns
Switching Energy 1.1mJ (on), 21mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 7V
Fall Time-Max (tf) 2000ns
Height 18.9mm
Length 15.8mm
Width 5mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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FGA30N60LSDTU Документы

FGA30N60LSDTU brand manufacturers: ON Semiconductor, Anli stock, FGA30N60LSDTU reference price.ON Semiconductor. FGA30N60LSDTU parameters, FGA30N60LSDTU Datasheet PDF and pin diagram description download.You can use the FGA30N60LSDTU Transistors - IGBTs - Single, DSP Datesheet PDF, find FGA30N60LSDTU pin diagram and circuit diagram and usage method of function,FGA30N60LSDTU electronics tutorials.You can download from the Anli.