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FGA30N65SMD Технические параметры

ON Semiconductor  FGA30N65SMD technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка ON Semiconductor
Factory Lead Time 5 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Package / Case TO-3P-3, SC-65-3
Mounting Type Through Hole
Mount Through Hole
Number of Pins 3Pins
Weight 6.401g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 650V
Collector-Emitter Saturation Voltage 2.29V
Test Conditions 400V, 30A, 6 Ω, 15V
Number of Elements 1 Element
Published 2012
Packaging Tube
Operating Temperature -55°C~175°C TJ
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Свойство продукта Значение свойства
Max Power Dissipation 300W
Element Configuration Single
Power Dissipation 300W
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 650V
Max Collector Current 60A
Reverse Recovery Time 35ns
Turn On Time 41 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 30A
Turn Off Time-Nom (toff) 125 ns
IGBT Type Field Stop
Gate Charge 87nC
Current - Collector Pulsed (Icm) 90A
Td (on/off) @ 25°C 14ns/102ns
Switching Energy 716μJ (on), 208μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Width 5mm
Length 16.2mm
Height 20.1mm
RoHS Status ROHS3 Compliant
Radiation Hardening No
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FGA30N65SMD Документы

FGA30N65SMD brand manufacturers: ON Semiconductor, Anli stock, FGA30N65SMD reference price.ON Semiconductor. FGA30N65SMD parameters, FGA30N65SMD Datasheet PDF and pin diagram description download.You can use the FGA30N65SMD Transistors - IGBTs - Single, DSP Datesheet PDF, find FGA30N65SMD pin diagram and circuit diagram and usage method of function,FGA30N65SMD electronics tutorials.You can download from the Anli.