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FGA30S120P Технические параметры

ON Semiconductor  FGA30S120P technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Factory Lead Time 15 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3Pins
Weight 6.401g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.3kV
Collector-Emitter Saturation Voltage 2.3V
Number of Elements 1 Element
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2016
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Свойство продукта Значение свойства
HTS Code 8541.29.00.95
Max Power Dissipation 348W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Rise Time-Max 490ns
Element Configuration Single
Input Type Standard
Power - Max 348W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.3kV
Max Collector Current 60A
Voltage - Collector Emitter Breakdown (Max) 1300V
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 30A
IGBT Type Trench Field Stop
Gate Charge 78nC
Current - Collector Pulsed (Icm) 150A
Gate-Emitter Voltage-Max 25V
Gate-Emitter Thr Voltage-Max 7.5V
Height 20.1mm
Length 15.8mm
Width 5mm
RoHS Status ROHS3 Compliant
Просмотр сходства

FGA30S120P Документы

FGA30S120P brand manufacturers: ON Semiconductor, Anli stock, FGA30S120P reference price.ON Semiconductor. FGA30S120P parameters, FGA30S120P Datasheet PDF and pin diagram description download.You can use the FGA30S120P Transistors - IGBTs - Single, DSP Datesheet PDF, find FGA30S120P pin diagram and circuit diagram and usage method of function,FGA30S120P electronics tutorials.You can download from the Anli.