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FGA50N100BNTD2 Технические параметры

ON Semiconductor  FGA50N100BNTD2 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3Pins
Weight 6.401g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1kV
Collector-Emitter Saturation Voltage 1.5V
Number of Elements 1 Element
Test Conditions 600V, 60A, 10 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Свойство продукта Значение свойства
Max Power Dissipation 156W
Element Configuration Single
Input Type Standard
Power - Max 156W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1kV
Max Collector Current 50A
Reverse Recovery Time 75 ns
Voltage - Collector Emitter Breakdown (Max) 1000V
Turn On Time 102 ns
Vce(on) (Max) @ Vge, Ic 2.9V @ 15V, 60A
Turn Off Time-Nom (toff) 308 ns
IGBT Type NPT and Trench
Gate Charge 257nC
Current - Collector Pulsed (Icm) 200A
Td (on/off) @ 25°C 34ns/243ns
Gate-Emitter Voltage-Max 25V
Gate-Emitter Thr Voltage-Max 7V
Fall Time-Max (tf) 100ns
Height 20.1mm
Length 15.8mm
Width 5mm
Radiation Hardening No
RoHS Status ROHS3 Compliant

FGA50N100BNTD2 Документы

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