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FGA50N100BNTDTU Технические параметры

ON Semiconductor  FGA50N100BNTDTU technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Factory Lead Time 5 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3Pins
Weight 6.401g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1kV
Collector-Emitter Saturation Voltage 2.5V
Number of Elements 1 Element
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Свойство продукта Значение свойства
Max Power Dissipation 156W
Element Configuration Single
Power Dissipation 156W
Input Type Standard
Transistor Application AUTOMOTIVE IGNITION
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1kV
Max Collector Current 50A
Reverse Recovery Time 1.5μs
Voltage - Collector Emitter Breakdown (Max) 1000V
Turn On Time 460 ns
Vce(on) (Max) @ Vge, Ic 2.9V @ 15V, 60A
Turn Off Time-Nom (toff) 760 ns
IGBT Type NPT and Trench
Gate Charge 275nC
Current - Collector Pulsed (Icm) 100A
Gate-Emitter Voltage-Max 25V
Gate-Emitter Thr Voltage-Max 7V
Fall Time-Max (tf) 250ns
Height 20.1mm
Length 15.8mm
Width 5mm
Radiation Hardening No
RoHS Status ROHS3 Compliant

FGA50N100BNTDTU Документы

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