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FGA50S110P Технические параметры

ON Semiconductor  FGA50S110P technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Factory Lead Time 15 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3Pins
Weight 6.401g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.1kV
Collector-Emitter Saturation Voltage 2.7V
Number of Elements 1 Element
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Свойство продукта Значение свойства
HTS Code 8541.29.00.95
Max Power Dissipation 300W
Element Configuration Single
Power Dissipation 300W
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.1kV
Max Collector Current 50A
Voltage - Collector Emitter Breakdown (Max) 1100V
Turn On Time 370 ns
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 50A
Turn Off Time-Nom (toff) 492 ns
IGBT Type Trench Field Stop
Gate Charge 195nC
Current - Collector Pulsed (Icm) 120A
Gate-Emitter Voltage-Max 25V
Gate-Emitter Thr Voltage-Max 7.5V
Height 20.1mm
Length 15.8mm
Width 5mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Просмотр сходства

FGA50S110P Документы

FGA50S110P brand manufacturers: ON Semiconductor, Anli stock, FGA50S110P reference price.ON Semiconductor. FGA50S110P parameters, FGA50S110P Datasheet PDF and pin diagram description download.You can use the FGA50S110P Transistors - IGBTs - Single, DSP Datesheet PDF, find FGA50S110P pin diagram and circuit diagram and usage method of function,FGA50S110P electronics tutorials.You can download from the Anli.