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FGA60N60UFDTU Технические параметры

ON Semiconductor  FGA60N60UFDTU technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Factory Lead Time 6 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3Pins
Weight 6.401g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 600V
Number of Elements 1 Element
Test Conditions 400V, 60A, 5 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOW CONDUCTION LOSS
HTS Code 8541.29.00.95
Свойство продукта Значение свойства
Max Power Dissipation 298W
Element Configuration Single
Input Type Standard
Power - Max 298W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 120A
Reverse Recovery Time 47 ns
Turn On Time 83 ns
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 60A
Turn Off Time-Nom (toff) 204 ns
IGBT Type Field Stop
Gate Charge 188nC
Current - Collector Pulsed (Icm) 180A
Td (on/off) @ 25°C 23ns/130ns
Switching Energy 1.81mJ (on), 810μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Fall Time-Max (tf) 80ns
Height 20.1mm
Length 15.8mm
Width 5mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant

FGA60N60UFDTU Документы

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