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FGA60N65SMD Технические параметры

ON Semiconductor  FGA60N65SMD technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Factory Lead Time 7 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3Pins
Weight 6.401g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 650V
Collector-Emitter Saturation Voltage 1.9V
Number of Elements 1 Element
Test Conditions 400V, 60A, 3 Ω, 15V
Turn Off Delay Time 104 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOW CONDUCTION LOSS
HTS Code 8541.29.00.95
Свойство продукта Значение свойства
Max Power Dissipation 600W
Rise Time-Max 70ns
Element Configuration Single
Input Type Standard
Turn On Delay Time 18 ns
Power - Max 600W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 650V
Max Collector Current 120A
Reverse Recovery Time 47 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 60A
IGBT Type Field Stop
Gate Charge 189nC
Current - Collector Pulsed (Icm) 180A
Td (on/off) @ 25°C 18ns/104ns
Switching Energy 1.54mJ (on), 450μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 68ns
Height 20.1mm
Length 15.8mm
Width 5mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

FGA60N65SMD Документы

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