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FGA90N33ATDTU Технические параметры

ON Semiconductor  FGA90N33ATDTU technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE, NOT REC (Last Updated: 4 days ago)
Factory Lead Time 36 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3Pins
Weight 6.401g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 330V
Number of Elements 1 Element
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Свойство продукта Значение свойства
Terminal Finish MATTE TIN
Additional Feature LOW CONDUCTION LOSS
HTS Code 8541.29.00.95
Max Power Dissipation 223W
Element Configuration Single
Input Type Standard
Power - Max 223W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 330V
Max Collector Current 90A
Reverse Recovery Time 23 ns
Turn On Time 60 ns
Vce(on) (Max) @ Vge, Ic 1.4V @ 15V, 20A
Turn Off Time-Nom (toff) 360 ns
IGBT Type Trench
Gate Charge 95nC
Current - Collector Pulsed (Icm) 330A
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

FGA90N33ATDTU Документы

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