Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
FGAF20N60SMD Технические параметры
ON Semiconductor FGAF20N60SMD technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | ON Semiconductor | |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) | |
| Factory Lead Time | 7 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-3P-3 Full Pack | |
| Number of Pins | 3Pins | |
| Weight | 6.962g | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 600V | |
| Collector-Emitter Saturation Voltage | 1.9V | |
| Number of Elements | 1 Element | |
| Test Conditions | 400V, 20A, 10 Ω, 15V | |
| Operating Temperature | -55°C~175°C TJ | |
| Packaging | Tube | |
| Published | 2013 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin (Sn) | |
| HTS Code | 8541.29.00.95 | |
| Max Power Dissipation | 75W | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Element Configuration | Single | |
| Case Connection | ISOLATED | |
| Input Type | Standard | |
| Power - Max | 75W | |
| Transistor Application | MOTOR CONTROL | |
| Polarity/Channel Type | N-CHANNEL | |
| Collector Emitter Voltage (VCEO) | 600V | |
| Max Collector Current | 40A | |
| Reverse Recovery Time | 26.7 ns | |
| Turn On Time | 31 ns | |
| Vce(on) (Max) @ Vge, Ic | 1.7V @ 15V, 20A | |
| Turn Off Time-Nom (toff) | 109 ns | |
| IGBT Type | Field Stop | |
| Gate Charge | 64nC | |
| Current - Collector Pulsed (Icm) | 60A | |
| Td (on/off) @ 25°C | 12ns/91ns | |
| Switching Energy | 452μJ (on), 141μJ (off) | |
| Gate-Emitter Voltage-Max | 20V | |
| Gate-Emitter Thr Voltage-Max | 6V | |
| Fall Time-Max (tf) | 27ns | |
| Height | 26.7mm | |
| Length | 15.7mm | |
| Width | 3.2mm | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
FGAF20N60SMD Документы
- PCN Assembly/OriginMult Dev Assembly/Mold Chg 20/Mar/2019
- DatasheetsFGAF20N60SMD
- Environmental InformationMaterial Declaration FGAF20N60SMD
- PCN Design/SpecificationLogo 17/Aug/2017
- PCN PackagingTape and Box/Reel Barcode Update 07/Aug/2014 Mult Devices 24/Oct/2017
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ