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FGAF40N60UFTU Технические параметры

ON Semiconductor  FGAF40N60UFTU technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3 Full Pack
Number of Pins 3Pins
Weight 6.962g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Number of Elements 1 Element
Test Conditions 300V, 20A, 10 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Voltage - Rated DC 600V
Max Power Dissipation 100W
Current Rating 40A
Свойство продукта Значение свойства
Element Configuration Single
Power Dissipation 100W
Case Connection ISOLATED
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 40A
Continuous Drain Current (ID) 40A
Drain to Source Breakdown Voltage 600V
Turn On Time 67 ns
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 20A
Turn Off Time-Nom (toff) 190 ns
Gate Charge 77nC
Current - Collector Pulsed (Icm) 160A
Td (on/off) @ 25°C 15ns/65ns
Switching Energy 470μJ (on), 130μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Fall Time-Max (tf) 250ns
Height 26.5mm
Length 15.5mm
Width 5.5mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

FGAF40N60UFTU Документы

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