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FGB5N60UNDF Технические параметры

ON Semiconductor  FGB5N60UNDF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Factory Lead Time 5 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3Pins
Weight 1.31247g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 2.4V
Number of Elements 1 Element
Test Conditions 400V, 5A, 10 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Max Power Dissipation 73.5W
Terminal Form GULL WING
Свойство продукта Значение свойства
JESD-30 Code R-PSSO-G2
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 73.5W
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 10A
Reverse Recovery Time 35 ns
Turn On Time 7.5 ns
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 5A
Turn Off Time-Nom (toff) 151.6 ns
IGBT Type NPT
Gate Charge 12.1nC
Current - Collector Pulsed (Icm) 15A
Td (on/off) @ 25°C 5.4ns/25.4ns
Switching Energy 80μJ (on), 70μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 8.5V
Fall Time-Max (tf) 202ns
Height 4.83mm
Length 10.67mm
Width 9.65mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

FGB5N60UNDF Документы

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