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FGD3N60UNDF Технические параметры

ON Semiconductor  FGD3N60UNDF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Factory Lead Time 7 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3Pins
Weight 260.37mg
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Number of Elements 1 Element
Test Conditions 400V, 3A, 10 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Max Power Dissipation 60W
Terminal Form GULL WING
Base Part Number FGD3N60
Свойство продукта Значение свойства
JESD-30 Code R-PSSO-G2
Element Configuration Single
Power Dissipation 60W
Case Connection COLLECTOR
Input Type Standard
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 6A
Reverse Recovery Time 21ns
Max Breakdown Voltage 600V
Turn On Time 7.4 ns
Vce(on) (Max) @ Vge, Ic 2.52V @ 15V, 3A
Turn Off Time-Nom (toff) 146 ns
IGBT Type NPT
Gate Charge 1.6nC
Current - Collector Pulsed (Icm) 9A
Td (on/off) @ 25°C 5.5ns/22ns
Switching Energy 52μJ (on), 30μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 8.5V
Height 2.3mm
Length 6.6mm
Width 6.1mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

FGD3N60UNDF Документы

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