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FGH15T120SMD-F155 Технические параметры

ON Semiconductor  FGH15T120SMD-F155 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Factory Lead Time 6 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Weight 6.39g
Collector-Emitter Breakdown Voltage 1.2kV
Collector-Emitter Saturation Voltage 1.9V
Test Conditions 600V, 15A, 34 Ω, 15V
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2013
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 333W
Свойство продукта Значение свойства
Element Configuration Single
Power Dissipation 333W
Input Type Standard
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 30A
Reverse Recovery Time 72ns
Voltage - Collector Emitter Breakdown (Max) 1200V
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 15A
IGBT Type Trench Field Stop
Gate Charge 128nC
Current - Collector Pulsed (Icm) 60A
Td (on/off) @ 25°C 32ns/490ns
Switching Energy 1.15mJ (on), 460μJ (off)
Gate-Emitter Voltage-Max 25V
Gate-Emitter Thr Voltage-Max 7.5V
Radiation Hardening No
RoHS Status ROHS3 Compliant

FGH15T120SMD-F155 Документы

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