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FGH25N120FTDS Технические параметры

ON Semiconductor  FGH25N120FTDS technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Factory Lead Time 5 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Weight 6.39g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.2kV
Number of Elements 1 Element
Test Conditions 600V, 25A, 10 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2016
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Max Power Dissipation 313W
Element Configuration Single
Свойство продукта Значение свойства
Case Connection COLLECTOR
Input Type Standard
Power - Max 313W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 50A
Reverse Recovery Time 535 ns
JEDEC-95 Code TO-247AB
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 63 ns
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 25A
Turn Off Time-Nom (toff) 299 ns
IGBT Type Trench Field Stop
Gate Charge 169nC
Current - Collector Pulsed (Icm) 75A
Td (on/off) @ 25°C 26ns/151ns
Switching Energy 1.42mJ (on), 1.16mJ (off)
Gate-Emitter Voltage-Max 25V
Gate-Emitter Thr Voltage-Max 7.5V
Height 20.82mm
Length 15.87mm
Width 4.82mm
Radiation Hardening No
RoHS Status ROHS3 Compliant

FGH25N120FTDS Документы

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