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FGH30N6S2 Технические параметры
ON Semiconductor FGH30N6S2 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | ON Semiconductor | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 | |
| Supplier Device Package | TO-247-3 | |
| Collector-Emitter Breakdown Voltage | 600V | |
| Collector-Emitter Saturation Voltage | 2V | |
| Current-Collector (Ic) (Max) | 45A | |
| Test Conditions | 390V, 12A, 10Ohm, 15V | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tube | |
| Published | 2001 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -55°C | |
| Voltage - Rated DC | 600V |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Max Power Dissipation | 167W | |
| Current Rating | 45A | |
| Element Configuration | Single | |
| Power Dissipation | 167W | |
| Input Type | Standard | |
| Power - Max | 167W | |
| Rise Time | 10ns | |
| Collector Emitter Voltage (VCEO) | 600V | |
| Max Collector Current | 45A | |
| Voltage - Collector Emitter Breakdown (Max) | 600V | |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 12A | |
| Gate Charge | 23nC | |
| Current - Collector Pulsed (Icm) | 108A | |
| Td (on/off) @ 25°C | 6ns/40ns | |
| Switching Energy | 55μJ (on), 100μJ (off) | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |
FGH30N6S2 Документы
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