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FGH30N6S2D Технические параметры

ON Semiconductor  FGH30N6S2D technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка ON Semiconductor
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Supplier Device Package TO-247-3
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 2.5V
Current-Collector (Ic) (Max) 45A
Test Conditions 390V, 12A, 10Ohm, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 600V
Max Power Dissipation 167W
Свойство продукта Значение свойства
Current Rating 45A
Polarity NPN
Element Configuration Single
Power Dissipation 167W
Input Type Standard
Power - Max 167W
Rise Time 17ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 45A
Reverse Recovery Time 46 ns
Voltage - Collector Emitter Breakdown (Max) 600V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 12A
Gate Charge 23nC
Current - Collector Pulsed (Icm) 108A
Td (on/off) @ 25°C 6ns/40ns
Switching Energy 55μJ (on), 100μJ (off)
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free

FGH30N6S2D Документы

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