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FGH40N60SFTU Технические параметры

ON Semiconductor  FGH40N60SFTU technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка ON Semiconductor
Factory Lead Time 9 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Weight 6.39g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 2.3V
Number of Elements 1 Element
Test Conditions 400V, 40A, 10 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOW CONDUCTION LOSS
HTS Code 8541.29.00.95
Max Power Dissipation 290W
Base Part Number FGH40N60
Свойство продукта Значение свойства
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 290W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 80A
JEDEC-95 Code TO-247AB
Max Breakdown Voltage 1.2kV
Turn On Time 67 ns
Vce(on) (Max) @ Vge, Ic 2.9V @ 15V, 40A
Turn Off Time-Nom (toff) 150 ns
IGBT Type Field Stop
Gate Charge 120nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 25ns/115ns
Switching Energy 1.13mJ (on), 310μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Fall Time-Max (tf) 54ns
Height 20.6mm
Length 15.6mm
Width 4.7mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant

FGH40N60SFTU Документы

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