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FGH40T100SMD Технические параметры

ON Semiconductor  FGH40T100SMD technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Factory Lead Time 4 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Weight 6.39g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1kV
Collector-Emitter Saturation Voltage 2.3V
Number of Elements 1 Element
Test Conditions 600V, 40A, 10 Ω, 15V
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Max Power Dissipation 333W
Rise Time-Max 64ns
Свойство продукта Значение свойства
Element Configuration Single
Power Dissipation 333W
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1kV
Max Collector Current 80A
Reverse Recovery Time 78 ns
JEDEC-95 Code TO-247AB
Voltage - Collector Emitter Breakdown (Max) 1000V
Turn On Time 76 ns
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 40A
Turn Off Time-Nom (toff) 305 ns
IGBT Type Trench Field Stop
Gate Charge 265nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 29ns/285ns
Switching Energy 2.35mJ (on), 1.15mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Height 20.82mm
Length 15.87mm
Width 4.82mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

FGH40T100SMD Документы

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