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FGH50N6S2D Технические параметры

ON Semiconductor  FGH50N6S2D technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE, NOT REC (Last Updated: 5 days ago)
Factory Lead Time 4 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Weight 6.39g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Number of Elements 1 Element
Test Conditions 390V, 30A, 3 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2002
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Свойство продукта Значение свойства
Voltage - Rated DC 600V
Max Power Dissipation 463W
Current Rating 75A
Element Configuration Single
Power Dissipation 463W
Input Type Standard
Transistor Application POWER CONTROL
Rise Time 15ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 75A
Reverse Recovery Time 55ns
Turn On Time 28 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 30A
Turn Off Time-Nom (toff) 180 ns
Gate Charge 70nC
Current - Collector Pulsed (Icm) 240A
Td (on/off) @ 25°C 13ns/55ns
Switching Energy 260μJ (on), 250μJ (off)
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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FGH50N6S2D Документы

FGH50N6S2D brand manufacturers: ON Semiconductor, Anli stock, FGH50N6S2D reference price.ON Semiconductor. FGH50N6S2D parameters, FGH50N6S2D Datasheet PDF and pin diagram description download.You can use the FGH50N6S2D Transistors - IGBTs - Single, DSP Datesheet PDF, find FGH50N6S2D pin diagram and circuit diagram and usage method of function,FGH50N6S2D electronics tutorials.You can download from the Anli.