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FGH60N60UFDTU Технические параметры

ON Semiconductor  FGH60N60UFDTU technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка ON Semiconductor
Factory Lead Time 5 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Weight 6.39g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 600V
Current-Collector (Ic) (Max) 120A
Number of Elements 1 Element
Test Conditions 400V, 60A, 5 Ω, 15V
Turn Off Delay Time 130 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2015
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
HTS Code 8541.29.00.95
Max Power Dissipation 298W
Base Part Number FGH60N60
Element Configuration Single
Свойство продукта Значение свойства
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 23 ns
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 60A
Reverse Recovery Time 47ns
JEDEC-95 Code TO-247AB
Turn On Time 83 ns
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 60A
Turn Off Time-Nom (toff) 204 ns
IGBT Type Field Stop
Gate Charge 188nC
Current - Collector Pulsed (Icm) 180A
Td (on/off) @ 25°C 23ns/130ns
Switching Energy 1.81mJ (on), 810μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Fall Time-Max (tf) 80ns
Height 20.6mm
Length 15.6mm
Width 4.7mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

FGH60N60UFDTU Документы

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