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FGH75N60UFTU Технические параметры

ON Semiconductor  FGH75N60UFTU technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Factory Lead Time 4 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Weight 6.39g
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 600V
Test Conditions 400V, 75A, 3 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Max Power Dissipation 452W
Свойство продукта Значение свойства
Element Configuration Single
Input Type Standard
Power - Max 452W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 150A
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 75A
IGBT Type Field Stop
Gate Charge 250nC
Current - Collector Pulsed (Icm) 225A
Td (on/off) @ 25°C 27ns/128ns
Switching Energy 3.05mJ (on), 1.35mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Fall Time-Max (tf) 80ns
Height 20.6mm
Length 15.6mm
Width 4.7mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

FGH75N60UFTU Документы

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