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FGH75T65UPD Технические параметры

ON Semiconductor  FGH75T65UPD technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE, NOT REC (Last Updated: 6 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Weight 6.39g
Collector-Emitter Breakdown Voltage 650V
Collector-Emitter Saturation Voltage 2.3V
Test Conditions 400V, 75A, 3 Ω, 15V
Operating Temperature -55°C~175°C TJ
Packaging Tube
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Max Power Dissipation 375W
Свойство продукта Значение свойства
Rise Time-Max 56ns
Element Configuration Single
Input Type Standard
Power - Max 375W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 650V
Max Collector Current 150A
Reverse Recovery Time 85 ns
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 75A
IGBT Type Trench Field Stop
Gate Charge 385nC
Current - Collector Pulsed (Icm) 225A
Td (on/off) @ 25°C 32ns/166ns
Switching Energy 2.85mJ (on), 1.2mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 7.5V
Height 20.82mm
Length 15.87mm
Width 4.82mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Просмотр сходства

FGH75T65UPD Документы

FGH75T65UPD brand manufacturers: ON Semiconductor, Anli stock, FGH75T65UPD reference price.ON Semiconductor. FGH75T65UPD parameters, FGH75T65UPD Datasheet PDF and pin diagram description download.You can use the FGH75T65UPD Transistors - IGBTs - Single, DSP Datesheet PDF, find FGH75T65UPD pin diagram and circuit diagram and usage method of function,FGH75T65UPD electronics tutorials.You can download from the Anli.