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FGL35N120FTDTU Технические параметры

ON Semiconductor  FGL35N120FTDTU technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Factory Lead Time 4 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Number of Pins 3Pins
Weight 6.756g
Collector-Emitter Breakdown Voltage 1.2kV
Test Conditions 600V, 35A, 10 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Max Power Dissipation 368W
Свойство продукта Значение свойства
Element Configuration Single
Input Type Standard
Power - Max 368W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 70A
Reverse Recovery Time 337 ns
Voltage - Collector Emitter Breakdown (Max) 1200V
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 35A
IGBT Type Trench Field Stop
Gate Charge 210nC
Current - Collector Pulsed (Icm) 105A
Td (on/off) @ 25°C 34ns/172ns
Switching Energy 2.5mJ (on), 1.7mJ (off)
Gate-Emitter Voltage-Max 25V
Gate-Emitter Thr Voltage-Max 7.5V
Height 26.4mm
Length 20.2mm
Width 5.2mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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FGL35N120FTDTU Документы

FGL35N120FTDTU brand manufacturers: ON Semiconductor, Anli stock, FGL35N120FTDTU reference price.ON Semiconductor. FGL35N120FTDTU parameters, FGL35N120FTDTU Datasheet PDF and pin diagram description download.You can use the FGL35N120FTDTU Transistors - IGBTs - Single, DSP Datesheet PDF, find FGL35N120FTDTU pin diagram and circuit diagram and usage method of function,FGL35N120FTDTU electronics tutorials.You can download from the Anli.