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FGP10N60UNDF Технические параметры

ON Semiconductor  FGP10N60UNDF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Factory Lead Time 4 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Weight 1.8g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 2.3V
Number of Elements 1 Element
Test Conditions 400V, 10A, 10 Ω, 15V
Turn Off Delay Time 55 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Max Power Dissipation 139W
Свойство продукта Значение свойства
Element Configuration Single
Power Dissipation 139W
Input Type Standard
Turn On Delay Time 8.1 ns
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 20A
Reverse Recovery Time 37.7 ns
JEDEC-95 Code TO-220AB
Turn On Time 15.4 ns
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 10A
Turn Off Time-Nom (toff) 89.3 ns
IGBT Type NPT
Gate Charge 37nC
Current - Collector Pulsed (Icm) 30A
Td (on/off) @ 25°C 8ns/52.2ns
Switching Energy 150μJ (on), 50μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 8.5V
Fall Time-Max (tf) 24.8ns
Height 16.51mm
Length 10.67mm
Width 4.83mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

FGP10N60UNDF Документы

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