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FGY75N60SMD Технические параметры

ON Semiconductor  FGY75N60SMD technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 8 hours ago)
Factory Lead Time 6 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3 Variant
Number of Pins 3Pins
Weight 7.629g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 1.9V
Number of Elements 1 Element
Test Conditions 400V, 75A, 3 Ω, 15V
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2010
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOW CONDUCTION LOSS
HTS Code 8541.29.00.95
Max Power Dissipation 750W
Свойство продукта Значение свойства
Element Configuration Single
Input Type Standard
Power - Max 750W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 150A
Reverse Recovery Time 55 ns
Turn On Time 76 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 75A
Turn Off Time-Nom (toff) 161 ns
IGBT Type Field Stop
Gate Charge 248nC
Current - Collector Pulsed (Icm) 225A
Td (on/off) @ 25°C 24ns/136ns
Switching Energy 2.3mJ (on), 770μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Fall Time-Max (tf) 29ns
Height 20.32mm
Length 15.87mm
Width 4.82mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

FGY75N60SMD Документы

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