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FJAF6810ATU Технические параметры

ON Semiconductor  FJAF6810ATU technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3 Full Pack
Number of Pins 3Pins
Weight 6.961991g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 750V
Collector-Emitter Saturation Voltage 3V
Number of Elements 1 Element
hFEMin 5
Operating Temperature 150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Voltage - Rated DC 750V
Max Power Dissipation 60W
Свойство продукта Значение свойства
Current Rating 10A
Base Part Number FJAF6810
Element Configuration Single
Power Dissipation 60W
Case Connection ISOLATED
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 750V
Max Collector Current 10A
DC Current Gain (hFE) (Min) @ Ic, Vce 5 @ 6A 5V
Current - Collector Cutoff (Max) 1mA
Vce Saturation (Max) @ Ib, Ic 3V @ 1.5A, 6A
Collector Base Voltage (VCBO) 1.5kV
Emitter Base Voltage (VEBO) 6V
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

FJAF6810ATU Документы

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