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FJN4312RBU Технические параметры

ON Semiconductor  FJN4312RBU technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single, Pre-Biased
Марка ON Semiconductor
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package TO-92-3
Current-Collector (Ic) (Max) 100mA
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Свойство продукта Значение свойства
Power - Max 300mW
Transistor Type PNP - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max) 40V
Frequency - Transition 200MHz
Resistor - Base (R1) 47 kOhms
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FJN4312RBU Документы

FJN4312RBU brand manufacturers: ON Semiconductor, Anli stock, FJN4312RBU reference price.ON Semiconductor. FJN4312RBU parameters, FJN4312RBU Datasheet PDF and pin diagram description download.You can use the FJN4312RBU Transistors - Bipolar (BJT) - Single, Pre-Biased, DSP Datesheet PDF, find FJN4312RBU pin diagram and circuit diagram and usage method of function,FJN4312RBU electronics tutorials.You can download from the Anli.