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FJP3305H2TU Технические параметры
ON Semiconductor FJP3305H2TU technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | ON Semiconductor | |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) | |
| Factory Lead Time | 2 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 | |
| Number of Pins | 3Pins | |
| Weight | 1.8g | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 400V | |
| Number of Elements | 1 Element | |
| hFEMin | 8 | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tube | |
| Published | 2008 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin (Sn) | |
| Voltage - Rated DC | 700V | |
| Max Power Dissipation | 75W |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Current Rating | 4A | |
| Frequency | 4MHz | |
| Base Part Number | FJP3305 | |
| Element Configuration | Single | |
| Power Dissipation | 75W | |
| Transistor Application | SWITCHING | |
| Gain Bandwidth Product | 4MHz | |
| Polarity/Channel Type | NPN | |
| Transistor Type | NPN | |
| Collector Emitter Voltage (VCEO) | 400V | |
| Max Collector Current | 4A | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 26 @ 1A 5V | |
| Current - Collector Cutoff (Max) | 1μA ICBO | |
| JEDEC-95 Code | TO-220AB | |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 1A, 4A | |
| Transition Frequency | 4MHz | |
| Collector Base Voltage (VCBO) | 700V | |
| Emitter Base Voltage (VEBO) | 9V | |
| Height | 16.51mm | |
| Length | 10.67mm | |
| Width | 4.83mm | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
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